SiC Devices
SiC Schottky Barrier Diode
SiC Schottky Barrier Diode
A SiC Schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage.
They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.
Series List
Schottky Barrier Diodes (Single)
Schottky Barrier Diodes (Dual)
- Low IR SBD
- SBD
Features
- High efficiency
- Miniaturization
- Reduced LC filter and unit size (compared to the 2-level type)
- Lower system costs due to fewer switching losses
Benefits
- Lower conduction loss than conventional products
- Decrease device temperature in whole temperature range
- Higher surge current to enhance reliability
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